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1

A new physics-based model for time-dependent Dielectric breakdown

B.J. Schlund, J. Suehle, C. Messick, P. Chaparala

Journal:

Microelectronics Reliability

Year:

1996

Language:

english

File:

PDF, 265 KB

english, 1996

2

The measurement, use and interpretation of the temperature coefficient of resistance of metallizations

Harry A. Schafft, John S. Suehle

Journal:

Solid-State Electronics

Year:

1992

Language:

english

File:

PDF, 693 KB

english, 1992

3

Optimized temperature-pulse sequences for the enhancement of chemically specific response patterns from micro-hotplate gas sensors

R.E. Cavicchi, J.S. Suehle, K.G. Kreider, M. Gaitan, P. Chaparala

Journal:

Sensors and Actuators B: Chemical

Year:

1996

Language:

english

File:

PDF, 770 KB

english, 1996

4

Investigation of the intrinsic SiO2 area dependence using TDDB testing and model integration into the design process

James Prendergast, Nigel Foley, John S. Suehle

Journal:

Microelectronics Reliability

Year:

1998

Language:

english

File:

PDF, 354 KB

english, 1998

5

Reverse short channel effects in high-k gated nMOSFETs

J.-P. Han, S.M. Koo, E.M. Vogel, E.P. Gusev, C. D’Emic, C.A. Richter, J.S. Suehle

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 117 KB

english, 2005

6

Tin oxide gas sensor fabricated using CMOS micro-hotplates and in-situ processing

Suehle, J.S., Cavicchi, R.E., Gaitan, M., Semancik, S.

Journal:

IEEE Electron Device Letters

Year:

1993

Language:

english

File:

PDF, 419 KB

english, 1993

7

A monolithic CMOS microhotplate-based gas sensor system

Afridi, M.Y., Suehle, J.S., Zaghloul, M.E., Berning, D.W., Hefner, A.R., Cavicchi, R.E., Semancik, S., Montgomery, C.B., Taylor, C.J.

Journal:

IEEE Sensors Journal

Year:

2002

Language:

english

File:

PDF, 1.31 MB

english, 2002

8

Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments

Yu, Liangchun C., Dunne, Greg T., Matocha, Kevin S., Cheung, Kin P., Suehle, John S., Sheng, Kuang

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2010

Language:

english

File:

PDF, 1.04 MB

english, 2010

9

Reliability of laser-induced metallic vertical links

Wei Zhang,, Joo-Han Lee,, Yuan Chen,, Bernstein, J.B., Suehle, J.S.

Journal:

IEEE Transactions on Advanced Packaging

Year:

1999

Language:

english

File:

PDF, 300 KB

english, 1999

10

Artificial Intelligence in Diagnostic Imaging

Sharma, Puneet, Suehling, Michael, Flohr, Thomas, Comaniciu, Dorin

Journal:

Journal of Thoracic Imaging

Year:

2020

File:

PDF, 301 KB

2020

11

Characterization of time-dependent dielectric breakdown in intrinsic thin SiO2

John S. Suehle, Prasad Chaparala

Journal:

Microelectronics Journal

Year:

1996

Language:

english

File:

PDF, 550 KB

english, 1996

12

Techniques and characterization of pulsed electromigration at the wafer-level

John S. Suehle, Harry A. Schafft

Journal:

Microelectronics Reliability

Year:

1992

Language:

english

File:

PDF, 463 KB

english, 1992

13

Characterization of electrically active defects in high-k gate dielectrics by using low frequency noise and charge pumping measurements

H.D. Xiong, D. Heh, M. Gurfinkel, Q. Li, Y. Shapira, C. Richter, G. Bersuker, R. Choi, J.S. Suehle

Journal:

Microelectronic Engineering

Year:

2007

Language:

english

File:

PDF, 470 KB

english, 2007

14

Enhanced gate induced drain leakage current in HfO2 MOSFETs

Moshe Gurfinkel, John S. Suehle, Yoram Shapira

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 817 KB

english, 2009

15

Band alignment of metal-oxide-semiconductor structure by internal photoemission spectroscopy and spectroscopic ellipsometry

N.V. Nguyen, O.A. Kirillov, J.S. Suehle

Journal:

Thin Solid Films

Year:

2011

Language:

english

File:

PDF, 874 KB

english, 2011

16

Selected-area deposition of multiple active films for conductometric microsensor arrays

S. Semancik, R.E. Cavicchi, K.G. Kreider, J.S. Suehle, P. Chaparala

Journal:

Sensors and Actuators B: Chemical

Year:

1996

Language:

english

File:

PDF, 656 KB

english, 1996

17

Detailed study and projection of hard breakdown evolution in ultra-thin gate oxides

J.S. Suehle, B. Zhu, Y. Chen, J.B. Bernstein

Journal:

Microelectronics Reliability

Year:

2005

Language:

english

File:

PDF, 578 KB

english, 2005

18

Ohmic contacts to semiconducting diamond using a Ti/Pt/Au trilayer metallization scheme

Hoff, H.A., Waytena, G.L., Vold, C.L., Suehle, J.S., Isaacson, I.P., Rebbert, M.L., Ma, D.I., Harris, K.

Journal:

Diamond and Related Materials

Year:

1996

Language:

english

File:

PDF, 662 KB

english, 1996

19

Ultrathin gate oxide reliability: physical models, statistics, and characterization

Journal:

IEEE Transactions on Electron Devices

Year:

2002

Language:

english

File:

PDF, 393 KB

english, 2002

20

Time Dependence of Bias-Stress-Induced SiC MOSFET Threshold-Voltage Instability Measurements

Lelis, A.J., Habersat, D., Green, R., Ogunniyi, A., Gurfinkel, M., Suehle, J., Goldsman, N.

Journal:

IEEE Transactions on Electron Devices

Year:

2008

Language:

english

File:

PDF, 864 KB

english, 2008

21

Hybrid postprocessing etching for CMOS-compatible MEMS

Tea, N.H., Milanovic, V., Zincke, C.A., Suehle, J.S., Gaitan, M., Zaghloul, M.E., Geist, J.

Journal:

Journal of Microelectromechanical Systems

Year:

1997

Language:

english

File:

PDF, 227 KB

english, 1997

22

[IEEE Proceedings of 1994 IEEE International Reliability Physics Symposium - San Jose, CA, USA (1994.04.11-1994.04.14)] Proceedings of 1994 IEEE International Reliability Physics Symposium RELPHY-94 - Field and temperature acceleration of time-dependent dielectric breakdown in intrinsic thin SiO/sub 2/

Suehle, J.S., Chaparala, P., Messick, C., Miller, W.M., Boyko, K.C.

Year:

1994

Language:

english

File:

PDF, 473 KB

english, 1994

23

Time-Dependent Dielectric Breakdown of 4H-SiC/$ \hbox{SiO}_{2}$ MOS Capacitors

Gurfinkel, Moshe, Horst, Justin C., Suehle, John S., Bernstein, Joseph B., Shapira, Yoram, Matocha, Kevin S., Dunne, Greg, Beaupre, Richard A.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2008

Language:

english

File:

PDF, 312 KB

english, 2008

24

The Role of High-Field Stress in the Negative-Bias Temperature Instability

Campbell, J. P., Cheung, Kin P., Suehle, John S., Oates, Anthony S.

Journal:

IEEE Transactions on Device and Materials Reliability

Year:

2010

Language:

english

File:

PDF, 790 KB

english, 2010

25

[IEEE 1999 IEEE International Integrated Reliability Workshop Final Report - Lake Tahoe, CA, USA (18-21 Oct. 1999)] 1999 IEEE International Integrated Reliability Workshop Final Report (Cat. No. 99TH8460) - Detecting breakdown in ultra-thin dielectrics using a fast voltage ramp

Snyder, E.S., Suehle, J.

Year:

1999

Language:

english

File:

PDF, 526 KB

english, 1999

26

[IEEE IEEE 1995 International Integrated Reliability Workshop. Final Report - Lake Tahoe, CA, USA (22-25 Oct. 1995)] IEEE 1995 International Integrated Reliability Workshop. Final Report - Assessing MOS gate oxide reliability on wafer level with ramped/constant voltage and current stress

Martin, A., Suehle, J., Chaparala, P., O'Sullivan, P., Mathewson, A., Messick, C.

Year:

1995

Language:

english

File:

PDF, 961 KB

english, 1995

27

[IEEE 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - Enschede, The Netherlands (8-11 October 1996)] Proceedings of the 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - A new physics-based model for time dependent dielectric breakdown

Schlund, B.I., Suehle, J., Messick, C., Chaparala, P.

Year:

1996

Language:

english

File:

PDF, 271 KB

english, 1996

28

[IEEE 2002 IEEE International Symposium on Circuits and Systems - Phoenix-Scottsdale, AZ, USA (26-29 May 2002)] 2002 IEEE International Symposium on Circuits and Systems. Proceedings (Cat. No.02CH37353) - A monolithic implementation of interface circuitry for CMOS compatible gas-sensor system

Afridi, M.Y., Suehle, J.S., Zaghloul, M.E., Berning, D.W., Hefner, A.R., Semancik, S., Cavicchi, R.E.

Year:

2002

Language:

english

File:

PDF, 425 KB

english, 2002

29

Demonstration of p-type In0.7Ga0.3As/GaAs0.35Sb0.65 and n-type GaAs0.4Sb0.6/In0.65Ga0.35As complimentary Heterojunction Vertical Tunnel FETs for ultra-low power logic

R. Pandey, H. Madan, H. Liu, V. Chobpattana, M. Barth, B. Rajamohanan, M. J. Hollander, T. Clark, K. Wang, J. H. Kim, D. Gundlach, K. P. Cheung, J. Suehle, R. Engel-herbert, S. Stemmer, S. Datta

Year:

2015

Language:

english

File:

PDF, 1.21 MB

english, 2015

30

Correction to Redox-Active Molecular Nanowire Flash Memory for High-Endurance and High-Density Nonvolatile Memory Applications

Zhu, Hao, Pookpanratana, Sujitra J., Bonevich, John E., Natoli, Sean N., Hacker, Christina A., Ren, Tong, Suehle, John S., Richter, Curt A., Li, Qiliang

Journal:

ACS Applied Materials & Interfaces

Year:

2016

Language:

english

File:

PDF, 122 KB

english, 2016

31

The effects of localized hot-carrier-induced charge in VLSI switching circuits

J.S. Suehle, K.F. Galloway

Journal:

Microelectronics Journal

Year:

1990

Language:

english

File:

PDF, 460 KB

english, 1990

32

An experimental comparison of measurement techniques to extract Si-SiO2 interface trap density

Steven C. Witczak, John S. Suehle, Michael Gaitan

Journal:

Solid-State Electronics

Year:

1992

Language:

english

File:

PDF, 989 KB

english, 1992

33

The interaction of stoichiometry, mechanical stress, and interface trap density in LPCVD Si-rich SiNx;Si structures

Steven C. Witczak, Michael Gaitan, John S. Suehle, Martin C. Peckerar, David I. Ma

Journal:

Solid-State Electronics

Year:

1994

Language:

english

File:

PDF, 1.10 MB

english, 1994

34

Silicon nanowire NVM with high-k gate dielectric stack

Xiaoxiao Zhu, D. Gu, Qiliang Li, D.E. Ioannou, H. Baumgart, J.S. Suehle, C.A. Richter

Journal:

Microelectronic Engineering

Year:

2009

Language:

english

File:

PDF, 358 KB

english, 2009

35

Calorimetric unfolding of the bimolecular and i-motif complexes of the human telomere complementary strand, d(C3TA2)4

Mahima Kaushik, Nathan Suehl, Luis A. Marky

Journal:

Biophysical Chemistry

Year:

2007

Language:

english

File:

PDF, 564 KB

english, 2007

36

Silicon nanowire NVM cell using high-k dielectric charge storage layer

X. Zhu, Y. Yang, Q. Li, D.E. Ioannou, J.S. Suehle, C.A. Richter

Journal:

Microelectronic Engineering

Year:

2008

Language:

english

File:

PDF, 202 KB

english, 2008

37

Investigation of the influence of ramped voltage stress on intrinsic tbd of MOS gate oxides

A Martin, P O'Sullivan, A Mathewson, J.S Suehle, P Chaparala

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 821 KB

english, 1997

38

Reliability of ultra-thin silicon dioxide under substrate hot-electron, substrate hot-hole and tunneling stress

Eric M. Vogel, Monica D. Edelstein, John S. Suehle

Journal:

Microelectronic Engineering

Year:

2001

Language:

english

File:

PDF, 282 KB

english, 2001

39

Microhotplate platforms for chemical sensor research

S. Semancik, R.E. Cavicchi, M.C. Wheeler, J.E. Tiffany, G.E. Poirier, R.M. Walton, J.S. Suehle, B. Panchapakesan, D.L. DeVoe

Journal:

Sensors and Actuators B: Chemical

Year:

2001

Language:

english

File:

PDF, 751 KB

english, 2001

40

Micro-differential scanning calorimeter for combustible gas sensing

R.E. Cavicchi, G.E. Poirier, N.H. Tea, M. Afridi, D. Berning, A. Hefner, J. Suehle, M. Gaitan, S. Semancik, C. Montgomery

Journal:

Sensors and Actuators B: Chemical

Year:

2004

Language:

english

File:

PDF, 418 KB

english, 2004

41

Fully-automatic, patient-specific 3D aortic arch modeling for patient treatment with aortic arch anomalies

Benedetta Leonardi, Dime Vitanovski, Allen Everett, Michael Suehling, Razvan Ionasec, Ludmilla Mantione, Giacomo Pongiglione

Journal:

Journal of Cardiovascular Magnetic Resonance

Year:

2012

Language:

english

File:

PDF, 126 KB

english, 2012

42

The optimization of the double mask system to minimize the contact resistance of a Ti/Pt/Au contact

G. L. Waytena, H. A. Hoff, I. P. Isaacson, M. L. Rebbert, D. I. Ma, Christie Marrian, J. S. Suehle

Journal:

Journal of Electronic Materials

Year:

1997

Language:

english

File:

PDF, 1.35 MB

english, 1997

43

Structural, optical and electronic properties of oxidized AIN thin films at different temperatures

Enam Ahmed Chowdhury, M. Dashiell, G. Qiu, J. O. Olowolafe, R. Jonczyk, D. Smith, A. Barnett, J. Kolodzey, K. M. Unruh, C. P. Swann, John Suehle, Yuan Chen

Journal:

Journal of Electronic Materials

Year:

1998

Language:

english

File:

PDF, 523 KB

english, 1998

44

Interface characterization of molecular-monolayer/SiO2 based molecular junctions

C.A. Richter, C.A. Hacker, L.J. Richter, O.A. Kirillov, J.S. Suehle, E.M. Vogel

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 322 KB

english, 2006

45

A Flexible Solution-Processed Memristor

Gergel-Hackett, N., Hamadani, B., Dunlap, B., Suehle, J., Richter, C., Hacker, C., Gundlach, D.

Journal:

IEEE Electron Device Letters

Year:

2009

Language:

english

File:

PDF, 288 KB

english, 2009

46

Automated measurement of lymph nodes: a phantom study

Sebastian Keil, Cedric Plumhans, Florian F. Behrendt, Sven Stanzel, Michael Suehling, Georg Mühlenbruch, Andreas H. Mahnken, Rolf W. Günther, Marco Das

Journal:

European Radiology

Year:

2009

Language:

english

File:

PDF, 221 KB

english, 2009

47

Low electric field breakdown of thin SiO2 films under static and dynamic stress

Suehle, J.S., Chaparala, P.

Journal:

IEEE Transactions on Electron Devices

Year:

1997

Language:

english

File:

PDF, 155 KB

english, 1997

48

Electrical conduction and dielectric breakdown in aluminum oxide insulators on silicon

Kolodzey, J., Chowdhury, E.A., Adam, T.N., Guohua Qui, Rau, I., Olowolafe, J.O., Suehle, J.S., Yuan Chen

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 190 KB

english, 2000

49

Limitations of conductance to the measurement of the interface state density of MOS capacitors with tunneling gate dielectrics

Vogel, E.M., Henson, W.K., Richter, C.A., Suehle, J.S.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 201 KB

english, 2000

50

Reliability of ultrathin silicon dioxide under combined substrate hot-electron and constant voltage tunneling stress

Vogel, E.M., Suehle, J.S., Edelstein, M.D., Wang, B., Chen, Y., Bernstein, J.B.

Journal:

IEEE Transactions on Electron Devices

Year:

2000

Language:

english

File:

PDF, 158 KB

english, 2000

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